Cambridge GaN Devices (CGD), a fabless semiconductor company that develops a range of energy-efficient gallium nitride (GaN)-based power devices to make sustainable electronics possible, is collaborating with GlobalFoundries (GF), a leading semiconductor manufacturer. The partnership strengthens CGD’s fabless strategy, expanding the supply chain for the company’s Integrated Circuit Enhancement-mode Gallium Nitride (ICeGaN) power devices.
CGD’s pioneering single-chip technology runs with standard silicon (Si) metal–oxide semiconductor field-effect transistor (MOSFET) drivers and is built using a standard Si complementary metal-oxide semiconductor (CMOS) wafer fab process. This means that there is no need for a specialist process in the wafer fab, and leveraging GF’s state of the art 8 inch process ensures the manufacturing costs of CGD products remain inherently competitive. 
Source: CGD
ICeGaN IP is design rather than process-based so is fab agnostic, meaning it is easily transferrable to new foundries. Furthermore, the CGD design flow has been built on years of experience in GaN technology and enables fast fab process porting through a proven methodology. Advanced machine learning algorithms are applied to proprietary test chip characterization data to refine the models, thus enabling the timely delivery of CGD’s newest products with reliable and predictable performance. This capability ensures “right first time” designs that enable ICeGaN power devices to be brought to market in less time, providing CGD with the agility to innovate and respond quickly to the changing application landscape.
Simon Stacey, chief operating officer at CGD, said, “Applying the CGD design flow to the excellent GF process design kit (PDK) is essential to enabling CGD to develop and manufacture our next generation GaN power devices at a much faster time to market. We are delighted to be partnering with GF, as their renowned foundry services and commitment to GaN are a perfect fit for our ICeGaN power devices.”
GaN offers unique advantages including higher efficiency, higher power density, compact in size with faster switching speeds. This enables power electronics designers to develop sustainable, energy-efficient systems. These inherent benefits, coupled with the flexibility of the proven fabless model, mean that CGD is positioned to take advantage of rapidly growing markets, which can already be seen in the growing demand for GaN technology.
Uniquely, ICeGaN combines a GaN switch, interface and protection circuitry on the same GaN chip, in contrast to most other solutions that use multi-chip or co-packaged solutions. CGD’s integrated approach means that devices are simple to drive using standard silicon technology and are very rugged. CGD is the only company worldwide with single-chip technology that can run on a standard driver, making next-generation power systems more efficient and truly scalable. This will enable design engineers to have confidence in GaN, which offers significant efficiency, size and thermal benefits over traditional silicon devices.
