Industrial Electronics

Cambridge GaN devices addresses challenges of data centers and more at APEC 2024

23 February 2024

Cambridge GaN Devices (CGD), the U.K.-based fabless, clean-tech semiconductor company that develops energy-efficient gallium, nitride (GaN)-based power devices that make greener electronics possible, will be present at the upcoming APEC 2024, IEEE Applied Power Electronics Conference and Exposition. In addition to having its largest ever booth at the show, the company will contribute with a number of papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by data centers as the use of artificial intelligence (AI) proliferates.

“With data centers now demanding 100 kW per rack and predicting even more in the very near future, power system designers are looking to employ GaN devices in new architectures. At CGD we are addressing this challenge with new devices and reference designs which we will be discussing at APEC, along with many other applications where GaN can play a huge role in enabling sustainable electronics solutions that are more efficient, have high performance and are more compact,” said CGD chief executive officer Giorgia Longobardi.

CGD will present three talks at APEC.

  • How ICeGaN technology can address the data center challenges that digitalization brings’, with Andrea Bricconi, chief commercial officer, and Peter Di Maso, VP of business development (Americas). Tuesday, February 27, 15:00 to 15:30
  • ‘Evaluation of GaN HEMT dv/dt Immunity and dv/dt induced false turn-on energy loss,’ with Nirmana Perera, application engineer. Wednesday, February 28, 09.10 to 09.30
  • ‘Monolithic integration addresses the design challenges of GaN Power devices’, with Di Chen, director of business development and technical marketing. Thursday February 29, 09:45 to 10:10

At booth 1553, CGD will present a range of demos designed to showcase industry’s first easy-to-use and scalable 650 V GaN HEMT family. ICeGaN H2 single-chip eMode HEMTs can be driven like a metal oxide-semiconductor field effect transistor (MOSFET), without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components. Addressing the increase in power required by server and industrial applications, CGD will show a 350 W PFC/LLC reference design using ICeGaN (650 V, 55 mΩ, H2 series). With a board power density of 23 W/in3, the bridgeless CrM Totem Pole PFC plus half-bridge LLC design has a peak efficiency of 95%, (93% average) and a no-load power consumption of 150 mW.

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