SK Hynix Inc. has introduced what it claims to be the world fastest mobile dynamic random access memory (DRAM) that operates at a data rate of 9.6 gigabits per second (Gbps), or about 13% faster than previous generations.
Called low power double data rate 5 turbo (LPDDR5T), the DRAM is targeted for mobile devices such as smartphones or tablets where power consumption and low voltage are essential.
This is the 7th generation LPDDR5X DRAM and it operates in the low voltage range of 1.01 V to 1.12 V.
SK Hynix has provided customers with samples of the 16 GB multi-chip package, which combines multiple LPDDR5T semiconductors into one package. The packaged product can process 77GB of data per second.
Inside the DRAM is SK Hynix’s integrated high-K metal gate (HKMG) process that enables the memory semiconductors to achieve a high performance.
The company plans to begin mass production of LPDDR5T using 10 nm technology in the second half of the year.