Memory and Storage

SK Hynix begins mass production of 10 nm DRAM

14 July 2021
The 10nm DRAM will reduce power consumption by 20% as well as reduce carbon emissions. Source: SK Hynix

SK Hynix has started mass production on 8 gigabit low-power double data rate 4 (LPDDR4) mobile dynamic random access memory (DRAM) based on its 10 nm process technology using extreme ultraviolet (EUV) equipment.

This is the first time that SK Hynix has adopted the EUV equipment for mass production after proving the stability of the lithography technology through partial adoption of previous DRAM generations.

EUV is lithography technology that is absorbed by all materials, so optical components are always reflective, not transmissive. The wavelength is short and producing the EUV optics is not easy because of the demanding requirements, but the effort is worth it because of the benefits to the technology for high resolution imaging, spectroscopy and materials processing.

Semiconductor companies are adopting EUV equipment for the photo process where circuit patterns are drawn on the wafer surfaces. SK Hynix said it plans to use the EUV technology for production of all its 10 nm DRAM products moving forward.

The company said it expects EUV to bring an improvement in productivity and further boost cost competitiveness. The 10 nm process technology will lead to a 25% increase in the number of DRAM chips produced from the same size wafer, compared to previous generations. SK Hynix also believes the 10 nm DRAM will help supply and demand conditions currently impacting the market by increasing the amount of DRAM available globally.

The LPDDR4 DRAM runs at 4266 Mbps and has reduced power consumption by 20% and will reduce carbon dioxide emissions.

To contact the author of this article, email PBrown@globalspec.com


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