X-Fab Silicon Foundries announced the availability of avalanche photodiode (APD) and single-photon avalanche diode (SPAD) products scenarios where there are extremely low-light conditions and augmented sensitivity is required, as well as tight timing resolutions involved.
Based on the company’s 180 nm high-voltage XH018 process, these function block devices deliver a combination of elevated performance parameters and straightforward integration. The APD has a strong linear gain figure, and is fully scalable — going from just ten to several hundred micrometers. The proprietary X-FAB quenching circuit used in the SPAD results in a dead time of less than 15 ns, making it capable of supporting high bandwidth. Its low dark count rate (less than 100 counts/s/µm²) means that it is far less susceptible to thermal noise. The high photon detection probability of the SPAD ensures that a much higher proportion of incident photons trigger an avalanche, a property maintained across an extensive range of wavelengths (e.g., 40% at 400 nm).
Applications include proximity sensing, lidar, time of flight, medical imaging (CT and PET) and scientific research. The AEC-Q100 devices are suitable for deployment within automotive systems and the low breakdown voltage (less than 20 V) achieved facilitates their incorporation onto customer dies.
Members of the X-FAB team will be available to discuss the new APD and SPAD products when the company exhibits at Sensors Expo 2019, June 26-27 in San Jose, California.