WIN Semiconductors Corp., a pure-play compound semiconductor foundry, is driving the development and deployment of 5G user equipment and network infrastructure in the sub-6 GHz and millimeter wave (mmWave) frequency bands.
Front-end semiconductor technology has a significant influence on battery life and total power consumption of mobile devices and the active antenna arrays employed in mmWave network infrastructure. Gallium arsenide (GaAs) is the technology of choice for front-ends used in LTE mobile devices and satisfies stringent linearity and efficiency 
requirements, providing high quality of service while maximizing battery life. 5G user equipment and MIMO access points will impose more difficult linearity/power consumption specifications than LTE, and WIN’s portfolio of high-performance GaAs technologies is well positioned to meet these new requirements and provide best value front-end solutions.
The fundamental performance advantages of GaAs make it the dominant semiconductor technology for cellular and Wi-Fi RF front-ends used in mobile devices. The technical and manufacturing demands of these large and highly competitive markets have driven significant advances in GaAs technology, and now WIN offers best-in-class front-end performance in all 5G bands and multifunction integration necessary for complex mmWave active antenna systems. WIN’s advanced GaAs platforms integrate best-in-class transmit and receive amplifier technologies with high-performance switch, logic and ESD protection functions to realize compact, high-performance, single chip, front-ends for mobile devices and MIMO access points operating in the sub-6 GHz and mmWave 5G bands.
WIN Semiconductors Corp. will be showcasing its 5G sub-6 GHz and mm-Wave solutions in booth No. 137 at the 2018 European Microwave Week in Madrid, being held September 23-28.
For more information, visit WIN Semiconductors Corp. at http://www.winfoundry.com/en_US/Index.aspx
