The Mavriq™ DS Series performs read and write operations with 4× less power than competitive solutions, and, in ultra-deep power down mode, uses as much as 50× less power. These DS devices can automatically enter the ultra-deep power down mode following write operations, reducing controller operations and overall system energy. The products also provide users over 100,000 write-cycle endurance across the full temperature and voltage range. Unlike EEPROMs based on floating gate technology, Adesto’s EEPROM products do not derate endurance across their temperature and voltage ranges, or when using byte-write operation.
The Mavriq™ DS family is built on Adesto’s RRAM technology, known as Conductive Bridging RAM (CBRAM®)—a breakthrough non-volatile memory technology that enables extremely low energy consumption. Adesto is reportedly the first company to successfully commercialize a resistive RAM technology, having shipped millions of production parts to customers seeking high-speed, low-energy, non-volatile memory solutions, including wireless communications and other IoT applications.
Security features designed into Mavriq™ DS products help protect against data tampering, including two 64-byte, one-time programmable security registers. The two registers are located outside of the memory map, and for extra protection, can only be accessed through control codes. One of the registers is dedicated for user programming, while the other is pre-programmed by Adesto with a unique identification number. Together the two registers allow for the use of one-time programmed serial numbers for authentication, and provide an additional means for device traceability.
Samples of Adesto’s Mavriq™ DS products are available now. The memory devices include a range of four densities: 32 Kbit, 64 Kbit, 128 Kbit and 256 Kbit.