Memory and Storage

Samsung Begins 20nm DDR4 Production

22 October 2014

Samsung Electronics Co. Ltd. has started mass producing what it calls the memory industry’s first 8Gb DDR4 memory and 32GB module based on 20 nanometer process technology.

The roll out of 8Gb DDR4 completes Samsung’s line-up of 20nm-based DRAM that includes a 20nm 4Gb DDR3 for PCs and a 20Nm 6Gb LPDDR3 for mobile devices, the Korean memory giant said. The 8Gb DDR4 chip is targeted at the global premium enterprise market where larger memory demands are needed.

"This is a significant step for Samsung and the industry," said Mike Howard, director of memory at IHS Technology. "While DDR4 is still very small volume we expect it to take off next year--especially when Intel and AMD support it on their server and client systems."

Jeeho Baek, VP of memory marketing at Samsung Electronics, said in a statement the DDR4 chips meets the “high performance, high density and energy efficiency needs” for the enterprise servers and will help Samsung meet the “demand from customers in the global premium enterprise market.”

Samsung’s 32GB registered dual in-line memory module (RDIMM) was introduced earlier this month using the 8Gb DDR4 chip. The module’s data transfer rate per pin reaches up to 2,400 Mbps, an approximately 29 percent performance increase, compared to the 1,866 Mbps bandwidth of a DDR3 server module, Samsung said. The 8Gb DRAM will also allow production of server modules with a 128GB capacity.

Other features of the Samsung DDR4 on 20nm process technology include improved error correction features and a 1.2 volt usage.

Related links:

IHS Memory

News articles:

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