Japanese semiconductor vendor Renesas has expanded its wide bandgap offerings with the completion of its acquisition of Transphorm Inc.
The expansion includes 15 gallium nitride (GaN) power semiconductors and related reference designs from Transphorm that will now be available to Renesas’ users.
The new reference designs that were unveiled after the close of the deal include GaN technology along with Renesas’ embedded processing, power, connectivity and analog portfolios. These reference designs also include Transphorm’s automotive-grade GaN technology integrated for on-board battery chargers as well as 3-in-1 powertrain solutions for electric vehicles.
Renesas has been ramping up its supply and support for power semiconductors over the last few years to keep pace with the growing demand for these wide bandgap devices that are used in EVs and the rise in renewable energy products.
Outside of the Transphorm acquisition, Renesas has beefed up its wide bandgap portfolio by:
- Opening a 300 mm wafer fab for power products in Kofu, Japan
- Ramping a new silicon carbide (SiC) production line at its Takasaki, Japan fab
- Securing a supply of SiC wafers from Wolfspeed for 10 years
Wide bandgap materials like GaN and SiC are key semiconductor types that are used to provide more efficient power for these applications that are expected to grow rapidly over the next decade. While EVs are slowing in sales it is not expected to go away as is renewable energy. Other applications for these wide bandgap chips include artificial intelligence data centers, industrial power conversion and consumer electronics.
