Semiconductors and Components

IR Launches Insulated-gate Bipolar Transistor

15 August 2014

International Rectifier (IR) has introduced a series of 600V Trench-gate Field Stop insulated-gate bipolar transistor (IGBT) family targeted at welding applications.

The series of IGBTs, dubbed the IR66xx series, features a rugged design, with low conduction and switching losses, according to IR, which is something customers desire in welding applications. The devices are co-packaged with a soft recovery low Qrr diode and feature ultra-fast switching with a 5µs short circuit rating.

Other features of the IGBTs include a high switching frequency, maximum junction temperature of 175°C and low EMI for improved reliability and efficiency, IR said.

Llewellyn Vaughan-Edmunds, IGBT product marketing manager for IR’s Energy Saving Products Business Unit, said in a statement said the rugged and reliable nature of the IR66xx devices providers designers a solution “to optimize performance in welding applications.”

The IR66xx series is available now priced from $1.49 to $4.58 each in 10,000-unit quantities.

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