Vishay Intertechnology, Inc. has introduced five new half-bridge insulated-gate bipolar transistor (IGBT) power modules in the newly redesigned INT-A-PAK package.
Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N and VS-GT200TS065N offer designers a choice of two best in class technologies — low voltage collector-emitter(ON) or low energy loss during turnoff (Eoff) — to lower conduction or switching losses in high current inverter stages for transportation, energy and industrial applications.
The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100% compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125° C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125° C and rated current.
The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low electromagnetic interference (EMI) to reduce snubbing requirements.
Samples and production quantities of the new IGBT power modules are available now, with lead times of 15 weeks. Pricing for U.S. delivery only starts at $90.