Texas Instruments Inc. is quickly ramping up its production of gallium nitride (GaN)-based power semiconductors — internally manufacturing four times more chips — with production beginning in its Aizu, Japan, factory and expansions to its Dallas, Texas, GaN fab.
TI is looking to match the demand for these power chips that are rapidly being used in applications like power adapters for laptops and smartphones; smaller, more efficient motors for HVAC; and other home appliances.
TI said it has successfully qualified its 200 mm GaN technology at the Aizu fab, which will allow it to manufacture 400% more GaN chips as the company seeks to bolster its internal manufacturing significantly by 2030 by sourcing semiconductors through multiple TI locations.
In August, TI received approval for direct funding from the CHIPS and Science Act to the tune of $1.6 billion to help fuel the construction of three 300 mm fabs in the U.S. including its two fabs just outside of Dallas. With this funding, a further increase in GaN production might be coming as TI already has plans.
Higher voltages, bigger wafers
The next steps are for TI to scale its GaN semiconductors to higher voltage, starting with 900 volts and increasing to higher voltages over time. This will allow the GaN chips to be used in further applications like:
- Robotics
- Renewable energy
- Server power supplies
The expansion of its GaN production includes the pilot project to develop 300 mm GaN wafers. The company said its GaN manufacturing processes are fully transferable to 300 mm technology, which would allow it to scale GaN production even further when these wafers are available.
GaN benefits
GaN power semiconductors offer several benefits when compared to traditional silicon chips. Not only are these wide bandgap devices that allow for the devices to operate at higher voltages, and thus better suited for high-power applications. But they also have:
- Higher efficiency
- Higher switching
- Smaller size
- Better thermal conductivity
- Reduced system costs
- Better durability
These reasons are why TI and other vendors are turning to this technology and will likely play a pivotal role in the future of power electronics.
Wide bandgap rising
For the better part of two years, wide bandgap technology — like GaN, silicon carbide (SiC) and even diamond power chips — have seen a significant uptick due to the emergence of applications such as electric vehicles, renewable energy and increased power savings in consumer electronics and the industrial sector.
SiC has long been in development but just recently has it become substantially in demand. Just last month, also as part of the CHIPS Act, Wolfspeed was granted direct funding to expand U.S. domestic SiC manufacturing. The $750 million will help in the construction of Wolfspeed’s John Palmour manufacturing center for silicon carbide as well as an expansion to its Marcy, New York, SiC facility.
Not surprisingly, Wolfspeed and TI are only two of several companies expanding their wide bandgap technology portfolio and manufacturing as they prepare for these applications to continue to grow in demand in the coming years.
