The state of New York is collaborating with semiconductor vendors IBM, Micron Technology, Applied Materials, Tokyo Electron and others to build what it claims is the first high numerical aperture (NA) extreme ultraviolet (EUV) lithography R&D center in North America.
The $10 billion partnership will be established at the NY CREATES’ NanoTech Complex in Albany, New York. The center will support the research and development of complex chips and will be geared to support New York’s tech economy and position the state to be a leader in the region for technology, New York Governor Kathy Hochul said.
NY CREATES under the collaboration will acquire and install a High NA EUV lithography tool that is designed by semiconductor equipment maker ASML. Once built, the High NA EUV Center will seek to develop chips for the next generation of smartphones, tablets, laptops and more.
Additionally, the goal is to position New York state as a leading candidate to secure hub status under the National Semiconductor Technology Center, which would help to unlock potential funding of more than $11 billion under the CHIPS and Science Act funding.
The project
According to the state of New York, the project will create at least 700 direct jobs and retain thousands of indirect jobs in Albany. The center will receive about $9 billion in private spending and investment with partners committing to expanding workforce development programming like investments in SUNY and Rensselaer Polytechnic Institute. Other public and private workforce development activities will include:
- K-12 STEM academic programs
- Training
- Internships
- Experiential engineering for college students
- Academic research partnerships
New York state plans to invest $1 billion to expand the Albany NanoTech Complex for the establishment of the High NA EUV Center. This will include funding for the ASML scanner and the construction of NanoFab Reflection, a new building with more than 50,000 square feet of cleanroom space.
