Intel Corp. has opened its latest expansion of D1X, its leading-edge fab in Hillsboro, Oregon.
The $3 billion expansion is part of Intel’s goal to increase development of U.S. domestic semiconductor manufacturing and R&D. As part of the expansion, the facility now has 270,000 additional square feet of clean room space to develop next generation silicon processes.
This will allow for multiple logic process technologies at various stages of the development cycle in the D1X factory, Intel said.
Additionally, Intel has named the nearly 500-acre campus as Gordon Moore Park at Ronler Acres. The facility will be the headquarters of Intel’s global technology development organization that is responsible for creating new transistor architectures, wafer processes and packaging technologies. High-k metal gate technology, tri-gate 3D transistors and strained silicon inventions were originated at the Oregon facility.
New products that will be coming through 2025 and beyond include:
- RibbonFET, a new transistor architecture.
- PowerVia, a backside power delivery method.
- The use of high NA extreme ultraviolet (EUV) next generation lithography.
The facility employs nearly 22,000 people across four campuses in Hillsboro. This expansion brings total investment in the Oregon fab to $52 billion.
