Industrial Electronics

Nexperia now offers high-performance silicon carbide diodes

17 November 2021

Nexperia makes its entry into the high-power silicon carbide (SiC) diodes market with the introduction of 650 V, 10 A SiC Schottky diodes.

This SiC Schottky diode is an industrial-grade device with 650 V repetitive peak reverse voltage and 10 A continuous forward current, designed to combine ultra-high performance and high efficiency with low Source: NexperiaSource: Nexperiaenergy loss in power conversion applications. Providing the added benefit of a high-voltage compliant real 2-pin (R2P) package with higher creepage distance, it is available in a choice of surface mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247-2) devices. Engineering samples are available on request with a full product release planned for the second quarter of 2022. Nexperia plans to continuously increase its portfolio of SiC diodes, which will lead to a total of 72 products operating at voltage levels of 650 V and 1200 V and with currents in the range of 6 A to 20 A.

Industrial and consumer applications for this dioxide include switch mode power supplies, AC-DC and DC-DC converters, battery charging infrastructure, uninterruptible power supplies and photovoltaic inverters. Nexperia also plans to release automotive-grade devices for use in vehicle electrification applications such as on-board chargers, inverters and high-voltage DC-DC converters.

To contact the author of this article, email

Powered by CR4, the Engineering Community

Discussion – 0 comments

By posting a comment you confirm that you have read and accept our Posting Rules and Terms of Use.
Engineering Newsletter Signup
Get the GlobalSpec
Stay up to date on:
Features the top stories, latest news, charts, insights and more on the end-to-end electronics value chain.
Weekly Newsletter
Get news, research, and analysis
on the Electronics industry in your
inbox every week - for FREE
Sign up for our FREE eNewsletter