Industrial Electronics

New 650 V SiC Schottky diodes from Littelfuse

15 February 2019

Littelfuse Inc has introduced two second-generation series of 650 V, AEC-Q101-qualified silicon carbide (SiC) Schottky diodes. The LSIC2SD065CxxA and LSIC2SD065AxxA series SiC Schottky diodes are available with a choice of current ratings (6 A, 8 A, 10 A, 16 A or 20 A). According to Littlefuse, they have negligible reverse recovery current, high surge capability and a Source: LittelfuseSource: Littelfusemaximum operating junction temperature of 175° C, so they are ideal for applications that require enhanced efficiency, reliability and thermal management.

When compared to standard silicon PN-junction diodes, the 650 V series SiC Schottky diodes support reduced switching losses and increased efficiency and the robustness of a power electronics system. Because they dissipate less energy and can operate at higher junction temperatures than silicon-based solutions, they allow for smaller heat sinks and a smaller system footprint.

Typical applications for 650 V series SiC Schottky diodes include:

  • Power factor correction (PFC)
  • Buck/boost stages in DC-DC converters
  • Free-wheeling diodes in inverter stage
  • High-frequency output rectification
  • Electric vehicle (EV) applications.

LSIC2SD065CxxA series SiC Schottky diodes are available in TO-252-2L (DPAK) packages, in tape and reel format, with a minimum order quantity of 2,500 devices. LSIC2SD065AxxA series SiC Schottky diodes are available in TO-220-2L packages, with 50 devices packed in a tube, with a minimum order quantity of 1,000 pieces. For a listing of Littelfuse distributors, please visit Littelfuse.com.

To contact the author of this article, email engineering360editors@globalspec.com


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