Space-grade field-programmable gate arrays (FPGAs) require reliable, high-density non-volatile memories that contain their boot configurations. To address the growing need for high-reliability memories, Infineon Technologies LLC has unveiled industry’s first high-density radiation-tolerant (RadTol) NOR flash memory products qualified to MIL-PRF-38535’s QML-V flow (QML-V equivalent). The QML-V flow is the highest quality and reliability standard certification for aerospace-grade ICs.
The 256 Mb and 512 Mb RadTol NOR flash non-volatile memories deliver superior, low-pin count, single-chip solutions for applications such as FPGA configuration, image storage, microcontroller data and boot code storage. When used at higher clock rates, the data transfer supported by the devices match or exceed traditional parallel asynchronous NOR flash memories while dramatically reducing pin count. The devices are radiation-tolerant up to 30 krad biased and 125 krad unbiased. At 125° C, the devices support 1,000 program/erase cycles and 30 years of data retention and at 85° C 10,000 program/erase cycles with 250 years of data retention.
The 512 Mb device comprises two independent 256 Mb die that fit side by side in a single package solution. This provides flexibility for designers to operate the device in dual QSPI or single QSPI mode on either die independently, offering an option to use the second die as a backup solution.
The devices can be programmed in-system through the FPGA or through a standalone programmer, offered in the same 36-lead ceramic flat package.