On Semiconductor has introduced two silicon carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) devices, one for the industrial market and a second one for automotive applications, at the 2019 Applied Power Electronics Conference & Exposition (APEC) show taking place March 19-21 in Anaheim, California.
The industrial-grade NTHL080N120SC1 and the AEC-Q101 automotive grade NVHL080N120SC1 can be used to create onboard charger applications for electric vehicles as well as solar and uninterruptible and server power supplies.
The MOSFETs feature low leakage current, a fast intrinsic diode with low reverse recovery charge, fast turn on/off combined with low forward voltage to reduce total power losses and low device capacitance. The devices operate at 1200 V, 80 milliohms (mΩ) and combine high power density with high efficient operation to reduce operating costs and overall system size due to smaller device footprints.
The NVHL080N120SC1 is designed to withstand high surge currents and offers high avalanche capability and robustness against short circuits. The automotive grade MOSFET has a maximum operating temperature of 175° C for electrification of powertrains as well as target applications where high density and space constraints require ambient temperatures.