Power Semiconductors

APEC 2019: United SiC ready to talk WBG

21 February 2019
UnitedSiC recently introduced its UF3C FAST series of silicon carbide FETs. Source: UnitedSiC

United SiC, a manufacturer of power semiconductors made with the wide band gap (WBG) material silicon carbide (SiC), will be focusing on new, innovative and efficient product offerings at this year’s Applied Power Electronics Conference (APEC). The company will be announcing an expanded product range that addresses the flyback charging applications market, including consumer adapters and auxiliary power supplies.

Also recently introduced by the company is the UF3C FAST series of silicon carbide field effect transistors (FETs) suited for a variety of electric vehicle application areas, including EV chargers, DC-DC converters and traction drives, telecom and server power supplies, variable speed motor drives and photovoltaic inverters.

United SiC will also be a participant in APEC conference sessions that will dive into the debate spurred by the rise of WBG materials in the power electronics industry. These include a rap session exploring topics such as whether the benefit of WBG systems is justified by its cost; a technical session on devices and components; and an industry session on transitioning from silicon to silicon carbide in data center, industrial and automotive applications. According to a company press release: “These sessions are expected to explore some of the most exciting and hotly debated topics surrounding wide band gap devices.”

APEC 2019 runs March 17-21, 2019, in Anaheim, California. For more on the conference, visit our dedicated section Electronics360 covers APEC 2019.



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