Littelfuse, Inc. (Chicago, Ill.) has introduced its first series of silicon carbide (SiC) MOSFETs, the latest 
Source: Littelfuse, Inc.addition to the company’s growing power semiconductor line. In March, Littelfuse took another incremental step toward establishing industry leadership in the power semiconductor industry through a majority investment in the well-respected SiC technology development company, Monolith Semiconductor Inc. The LSIC1MO120E0080 Series, with a voltage rating of 1,200 V and ultra-low (80mΩ) on-resistance, are the first organically designed, developed and manufactured SiC MOSFETs to be released by this partnership. This device is optimized for high-frequency switching applications, providing a combination of ultra-low switching losses and ultra-fast switching speeds unavailable with traditional power transistor solutions.
When compared with silicon devices that have the same rating, the SiC MOSFET Series enables substantially greater energy efficiency, reduced system size/weight and increased power density in power electronics systems. It also offers superior robustness and exceptional performance, even at high operating temperatures (150° C).
Typical applications for these new SiC MOSFETs include power conversion systems such as solar inverters, switch mode power supplies, UPS systems, motor drives, high voltage DC/DC converters, battery chargers and induction heating.
The LSIC1MO120E0080 Series SiC MOSFET offers these key benefits:
• Ultra-fast switching supports higher efficiency and increased power density.
• Lower switching losses allow for higher switching frequencies.
• Higher operating temperatures ensure greater device robustness in a wider array of high temperature applications.
The LSIC1MO120E0080 Series SiC MOSFET is available in TO-247-3L packaging and provided in tubes in quantities of 450.
