Analog/Mixed Signal

Gallium Nitride Technology Gaining Ground in RF Power Semiconductor Market

15 August 2018

Gallium Nitride (GaN) continues to gain ground in the market for RF power semiconductor for wireless, according to a new report from market research firm ABI Research.

The technology bridges the gap between two older technologies — the high frequency performance of Gallium Arsenide (GaS) and the power handling capabilities of Silicon LDMOS — becoming a mainstream technology that will continue to capture a significant part of the wireless infrastructure market in the next few years, ABI said.

The company said the wireless infrastructure sub-segment has been anemic lately, but is holding its own and still represents about two-thirds of total RF power device sales. RF power semiconductor sales in this sub-segment are expected to reach $1 billion this year.

The deployment of 5G offers upsides, but the main issue is the timing of a large-scale rollout.

“The business environment for the RF power semiconductor device business has become more complex with potential trade tariffs, merger and acquisition troubles and other similar issues clouding the market,” said Lance Wilson, ABI Research Director.

Learn more about the RF market for wireless infrastructure with ABI Research’s new report, entitled “RF Power Semiconductor Devices for Mobile Wireless Infrastructure.

To contact the author of this article, email engineering360editors@globalspec.com


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