Guerrilla RF completes strategic acquisition of GaN device portfolio from Gallium Semiconductor

13 May 2024

Guerrilla RF, Inc. has finalized the acquisition of Gallium Semiconductor's entire portfolio of gallium nitride (GaN) power amplifiers and front-end modules. Effective April 26, 2024, the company acquired all previously released components as well as new cores under development at Gallium Semiconductor. Additionally, all associated intellectual property (IP) has been transferred to Guerrilla RF as part of this portfolio acquisition. By integrating these assets, the company intends to significantly enhance its ongoing efforts to develop and commercialize a new line of GaN devices tailored for wireless infrastructure, military and satellite communications applications. Source: Guerrilla RF, Inc.Source: Guerrilla RF, Inc.

According to the Yole Group, the radio frequency GaN device market is poised for substantial growth, projected to double from $1.3B in 2022 to $2.7B by 2028. This growth is primarily attributed to double-digit expansion within three key market segments relevant to Guerrilla RF: telecom infrastructure (including 5G and point-to-point systems), military and satellite communications, with projected compound annual growth rates (CAGRs) of 10%, 13% and 18%, respectively. Moreover, the GaN on silicon carbide variants utilized in Gallium Semiconductor's designs are forecasted to dominate this market for the next decade.

Guerrilla RF has already begun actively integrating these new components into its ordering system, with full portfolio integration anticipated by June 2024.

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