The MOSFET is housed in a through-hole 4L-TO247 package that offers a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC’s superior speed and efficiency. Meanwhile the manufacturer is also readying a 120 mΩ version (C3M0120100K) in the same 4L-TO247 package, which will be available in a few weeks. Additionally Wolfspeed also plans to release surface-mount versions of these devices, C3M0065100J and C3M0120100J, later this year. Like the 4L-TO247, the surface-mount devices will also offer a Kelvin source pin to help minimize gate ringing and reduce system losses.
To help designers quickly evaluate the performance of the 1,000 V SiC power MOSFET in a fully assembled circuit, Wolfspeed is offering a 20 kW full-bridge resonant LLC converter reference design. Labeled CRD-20DD09P-2, the LLC converter's reference design files include full schematics, bill of materials, simulation files and a detailed user guide. In essence, the reference design enables the user to easily calculate converter-level efficiency and power density gains utilizing the new 1,000 V, 65 mΩ SiC MOSFET in a 4L-TO247 package.