Wolfspeed Unwraps 1,000 V SiC MOSFET

04 November 2016

The 1,000 V, 65 mΩ SiC MOSFET comes in a through-hole 4L-TO247 package with Kelvin source connection.   Image Credit: Wolfspeed The 1,000 V, 65 mΩ SiC MOSFET comes in a through-hole 4L-TO247 package with Kelvin source connection. Image Credit: Wolfspeed Expanding its silicon carbide (SiC) portfolio, Wolfspeed, a Cree spinoff soon to be acquired by Infineon Technologies, has released a 1,000 V SiC power MOSFET in a newly optimized package for fast switching applications, such as industrial power supplies and electric vehicle charging systems. Offering high-speed switching with low output capacitance (60 pF) and low on-resistance (65 mΩ), the n-channel enhancement-mode MOSFET C3M0065100K enables a 30% reduction in component count while achieving more than 3× improvement in power density and a 33% increase in output power, claims the supplier. The continuous drain current rating for the new SiC power transistor is 35 A at room temperature and 22.5 A at 100° C junction temperature.

The MOSFET is housed in a through-hole 4L-TO247 package that offers a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC’s superior speed and efficiency. Meanwhile the manufacturer is also readying a 120 mΩ version (C3M0120100K) in the same 4L-TO247 package, which will be available in a few weeks. Additionally Wolfspeed also plans to release surface-mount versions of these devices, C3M0065100J and C3M0120100J, later this year. Like the 4L-TO247, the surface-mount devices will also offer a Kelvin source pin to help minimize gate ringing and reduce system losses.

To help designers quickly evaluate the performance of the 1,000 V SiC power MOSFET in a fully assembled circuit, Wolfspeed is offering a 20 kW full-bridge resonant LLC converter reference design. Labeled CRD-20DD09P-2, the LLC converter's reference design files include full schematics, bill of materials, simulation files and a detailed user guide. In essence, the reference design enables the user to easily calculate converter-level efficiency and power density gains utilizing the new 1,000 V, 65 mΩ SiC MOSFET in a 4L-TO247 package.

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