Low-voltage MOSFETS exhibit improved thermal performance and higher efficiency. Both products are optimized for enhanced driving and switching performance.
AOE6932 improves gate driving performance and reduces power loss at relatively low output current. AOE6936 features a 20 V gate voltage tolerance with much smaller parasitic capacitances. Both devices offer the same 8 mΩ (max) Rdson (@4.5 V gate driving voltage) on the high side FET, but present different Rdson values for the low side FET. AOE6932 is designed with a 1.8 mΩ (max) @ 4.5 Vgs low side FET, while AOE6936 is designed with a 3 mΩ (max) low side FET. Application tests show that these distinct configurations uniquely optimize each device to achieve the best efficiency and address specific application requirements, such as the input-output voltage headroom.
The AOE6932 is immediately available in production quantities with a lead time of 12–14 weeks. The unit price for 1,000 pieces is $1.05 each. The AOE6936 is immediately available in production quantities with a lead time of 12–14 weeks. The unit price for 1,000 pieces is $0.90 each.
