Toshiba Corp. is set to start production of NAND flash non-volatile memory on a 15nm manufacturing process technology at the end of April. The move puts Toshiba a little behind SK Hynix Inc., which announced production on 16nm process at the end of 2013.
Toshiba (Tokyo, Japan) plans to begin mass production of 2-bit-per-cell 128Gbit NAND memory at Fab 5 Yokkaichi at the end of April. A second manufacturing module is under construction at Fab 5 and the 15nm process will also be deployed there.
The new chips achieve the same write speed as chips formed with second-generation 19nm process technology, but boost the data transfer rate to 533Mbits per second, 1.3 times faster, by employing a high speed interface.
Toshiba is working on applying three-bit per cell at the 15nm node with the goal of starting mass production in the current quarter, the first quarter of the fiscal year. In parallel with developing stand-alone memories Toshiba is developing controller circuits for use with embedded NAND flash memory 3-bit-per-cell NAND flash memories for use in smartphones and tablet computers.
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