Everspin Technologies Inc. is seeking to challenge traditional NOR flash memory with the introduction of unified magnetoresistive random access memory (MRAM) technology for embedded systems.
Called Unisyst MRAM, the memory is a unified code storage and data memory MRAM architecture that can bridge traditional configuration memory and higher-density persistent storage. This will allow the memory to challenge NOR flash memory applications.
Everspin will offer Unisyst in densities ranging from 128 megabits to 2 gigabits, using a standard xSPI interface operating up to octal SPI at 200 MHz. The memory will work in demanding environments like:
- Aerospace
- Automotive
- Industrial
- Edge AI
“System designers are running into the physical and performance limits of NOR flash, especially as process nodes move below 40 nanometers and workloads become more demanding,” said Sanjeev Aggarwal, president and CEO of Everspin Technologies. “With Unisyst, we are extending our MRAM roadmap to higher densities while giving customers a practical way to start with Persyst today and migrate to a code-and-data MRAM architecture as soon as it is available.”
