Semiconductors are essential to almost every critical system, forming the backbone of a stable, modern grid. The collaboration addresses one of the most significant challenges in large-scale electrification: reducing energy losses and improving overall efficiency in high-voltage power conversion. By combining Hitachi Energy’s expertise in power module design with Pakal Technologies’ IGTO(t) innovation — which delivers 30% lower losses compared to today’s widely used devices — the collaboration aims to contribute to cumulative daily efficiency gains across energy infrastructure. Together, the companies intend to produce the highest-performing ≥3.3 kV power semiconductor modules for Hitachi Energy to offer to its growing global customer base, delivering higher performance, lower operating costs and greater long-term reliability across critical electrification projects.
Source: Hitachi Energy
The IGTO(t) represents the first new high-voltage silicon power semiconductor since the insulated gate bipolar transistor (IGBT) was introduced in the 1980s. The IGTO(t) delivers 30% lower conduction losses at high current and temperature than IGBT, while maintaining compatibility with existing module architectures. At the system level, these performance advances enable higher power density, reduced thermal and cooling requirements, and materially improved energy efficiency.
