Research hub Imec has announced the first partners for its 300 mm gallium-nitride (GaN) open innovation programs for low- and high-voltage power electronics.
The companies include Aixtron, GlobalFoundries, KLA Corp., Synopsys and Veeco.
The GaN program was set up to develop 300 mm GaN epi growth and low and high voltage GaN high electron mobility transistor (HEMT) process flow. The goal is to use 300 mm substrates that will not just reduce GaN device manufacturing costs but allow for the development of advanced power electronics devices like low-voltage point-of-load converters for CPUs and GPUs.
GaN-based fast battery chargers show the potential of this technology through GaN epi growth, GaN device and IC manufacturing. With this 300 mm GaN technology will allow new devices to enter the market with reduced form factors, smaller weight and better energy conversion efficiency compared to silicon technologies.
Some of these devices may include:
- On-board chargers and DC-DC converters for automotive applications
- Inverters for solar panels
- Power distribution systems for telecom and AI data centers
“The benefits of transitioning to 300mm wafers go beyond upscaling production and reducing manufacturing costs,” said Stefaan Decoutere, fellow and program director of the GaN power electronics program at Imec. “Our CMOS-compatible GaN technology now has access to 300mm state-of-the-art equipment that will allow us to develop more advanced GaN-based power devices. Examples are aggressively scaled low-voltage p-GaN gate HEMTs for use in point-of-load converters, supporting energy-efficient power distribution for CPUs and GPUs.”
The launch of the 300 mm GaN program follows successful 300 mm wafer handling tests and mask set development. Imec said it plans to have full 300 mm capabilities installed in its 300 mm cleanroom by end of 2025.
