A new semiconductor manufacturing technique has been developed by the University of Missouri that uses ultraviolet-enabled atomic layer deposition (UV-ALD) to precisely control where a thin layer of material is applied during fabrication.
The method would replace traditional atomic layer deposition (ALD), which is a typically messy process that involves spraying process coats even in areas that should stay clean. This is particularly a problem when manufacturing semiconductors that control the flow of electricity in smartphones, laptops, AI servers and more.
The method developed by University of Missouri researchers could reduce the manufacturing steps in a semiconductor fab that would save both time and materials.
“Our process cuts the traditional four or five manufacturing steps down to just two,” said Matthias Young, an assistant professor with joint appointments in Mizzou’s College of Engineering and College of Arts and Science. “We make the surface ‘sticky’ using UV light and then apply the coating. It only attaches where the light has been applied.”
The process is also better for the environment by reducing the use of chemicals.
Researchers demonstrated molybdenum Disulfide (MoS2), a material that could help to build the next-generation of semiconductors.
The full research can be found in the journal Chemistry of Materials.
