Micron Technology has rolled out what it claims is the industry’s fastest low-power double data rate 5X (LPDDR5X) memory with a speed grade at 10.7 gigabits per second (Gbps) designed to accelerate artificial intelligence (AI) applications on flagship smartphones.
Micron said the memory allows smartphones to operate faster along with a smoother mobile experience. It also enables a longer battery life with 20% power savings. This will allow smartphones to do more data-intensive workloads such as AI-power translation or image generation.
Additionally, the 1γ-based LPDDR5X is the first mobile memory to use advanced extreme ultraviolet (EUV) lithography and builds on the February sampling of the 1γ-based DDR5 memory for next-generation microprocessors for data centers and enterprise segments. It also uses high-K metal gate technology for improved transistor performance and EUV lithography for enhanced bit density.
Micron said it evaluated mobile AI response times from large language model Llama 2 based on the 1γ (1-gamma) node-based LPDDR5X memory compared to its 1β (1-beta) LPDDR5X’s 7.5 Gbps bandwidth. The company found:
- 30% faster responses in location-based restaurant recommendations.
- 50% faster results when translating voice inquiries.
- 25% faster responses when requesting car purchase recommendations.
Why it is needed
According to Micron, demand for compact solutions for smartphone designs is accelerating. A small form factor unlocks more possibilities for smartphone OEMs to design thinners and foldable phones.
Additionally, energy-intensive mobile AI workloads are increasing the processing needs of smartphones, tablets and laptops.
Any memory power savings or processor savings for power consumption are ideal for these next-generation smartphone designs, Micron said.
