Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology.
The company said the in-house manufactured transistors have earned certification to be used by the U.S. Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
The GaN High Electron Mobility Transistor (HEMT) devices are used for mission-critical space applications like:
- On-orbit space vehicles
- Manned space exploration
- Deep space probes
The HEMTs offer efficiency, thermal management and power density for smaller, lighter and more reliable space designs.
The first three devices from this series are 100 V, 52 A devices that feature:
- Drain source on resistance of 4 mΩ (typical)
- Total gate charge (Qg) of 8.8 nC (typical)
The transistors are encased in a hermetically sealed ceramic surface mount package and are single event effect (SEE) hardened up to LET (GaN) of 70 MeV.cm2/mg (Au ion).
Two devices, which are not JANS certified, are screened to a total ionizing dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794, Infineon said.
Infineon said it is the first company to achieve DLA JANS certification for fully internally manufactured GaN power devices. The certification requires many levels of screening for performance, quality and reliability for space applications.
