Join Altum RF, a supplier of high-performance radio frequency (RF) to millimeter-wave semiconductor solutions for next-generation markets and applications, at the IEEE MTT-S International Microwave Symposium 2025 (IMS 2025), to be held in San Francisco, California, June 15 to June 20.
Altum RF will showcase its featured products and technical expertise in booth #966 at the Moscone Center. Company leaders will be in the booth to answer questions about specific products, future plans and their decades of experience designing and delivering RF, microwave and millimeter-wave semiconductors.
Source: Altum RF
With over 40+ gallium arsenide (GaAs) and gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) from X-band to over 100 GHz, Altum RF will feature several products at IMS, including new components for satcom, telecommunication (with E-band), radar and test and measurement markets.
Highlights include Altum RF’s new E-band family of power amplifiers and low noise amplifiers supporting today’s demanding mmWave telecom and SATCOM applications by offering high output power and gain for longer-range links. The E-band power amplifiers include an on-chip integrated power detector.
Product highlights:
- ARF1018: 71-76 GHz E-band power amplifier, 1.8 W Psat, bare die
- ARF1019: 81-86 GHz E-band power amplifier, 1.6 W Psat, bare die
- ARF1206: 71-86 GHz low noise amplifier, 2.5-3.5 dB NF from 71-86 GHz, bare die
- ARF1303: DC-60 GHz distributed amplifier, 15 dB Gain, 24 dBm output PSAT
- ARF1200Q2: 22-31.5 GHz low noise amplifier, 1.6 dB NF, 2.5×2.5 QFN package
- ARF1202Q2: 22-31.5 GHz low noise amplifier, 2.5 dB NF, 2.5×2.5 QFN package
- ARF1020Q5: 9-11 GHz X-band power amplifier, 42 dBm, 5×5 QFN package
