ST Microelectronics and Chinese GaN foundry Innoscience have signed a gallium on nitride (GaN) technology development and manufacturing deal.
Under the joint initiative, Innoscience will use ST’s front-end manufacturing capacity outside China for its GaN wafers. ST will be able to use Innoscience’s front-end manufacturing capacity in China for its own GaN wafers.
The goal is to expand the individual offerings in GaN in the supply chain across two regions to meet demand for these electronic components in a wide range of applications like:
- Data centers
- Automotive
- Industrial power systems
- Consumer electronics
- Renewable energy
Why GaN?
The companies said that GaN power devices allow for an increase in system performance for power conversion, motion control and actuation. Additionally, it lowers losses, which helps with efficiency, enables a smaller size and a lighter weight in systems.
This means GaN-based applications have a lower cost and carbon footprint. Which is the main reason these power devices are being used in solar inverters, power supplies, electric vehicles and more.
