pSemi Corporation, a leader in the design and development of semiconductor integration and advanced connectivity, today announced the introduction of PE42447— a high power and linearity SP4T RF switch manufactured on pSemi’s advanced silicon-on-insulator (SOI) technology, now supporting frequency ranges across 10 MHz to 8 GHz. It delivers extremely low insertion loss and high linearity with high input power handling capability, making it ideal for hybrid beamforming in wireless infrastructure as well as any other applications in broad market that requires such exceptional performance.
pSemi has introduced the PE42447—a high power and linearity SP4T RF switch now supporting frequency ranges across 10 MHz to 8 GHz. Source: pSemi
Manufactured on pSemi’s patented next-generation UltraCMOS technology and packaged on a 20-lead 4x4 mm LGA package, PE42447 features low insertion loss of 0.4 dB at 2.6 GHz and 0.5 dB at 3.8 GHz. This switch has exceptional linearity of 85 dBm IIP3, high power handling of up to 100 watts, and switching time of around 1 microsecond. Its tolerance of 115° C ambient temperature makes it ideal for applications in a rugged environment including but not limited to wireless infrastructure.
Samples for the PE42447 are available now and are expected to be commercially available in the second half of 2024. For more information, please visit the PE42447 product page. To request a sample, please contact sales@psemi.com.
