The latest addition to the portfolio of silicon carbide (SiC) products offered by Diodes Incorporated is the DMWS120H100SM4 N-channel SiC metal-oxide semiconductor field-effect transistor (MOSFET). This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters and electric vehicle battery chargers.
The DMWS120H100SM4 operates at a high voltage (1,200 V) and drain current (up to 37 A) while maintaining
Source: Diodes Incorporated low thermal conductivity (RθJC = 0.6° C/W), making it well-suited for applications running in harsh environments. This MOSFET has a low RDS(ON) (typical) of only 80 mΩ (for a 15 V gate drive) to minimize conduction losses and provide higher efficiency. In addition, the device has a gate charge of only 52 nC to reduce switching losses and lower the package temperature.
This product is the first SiC MOSFET on the market in a TO247-4 package. The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, thereby enabling even higher power densities.
