Looking for a path to help accelerate gallium nitride (GaN) semiconductor manufacturing in the U.S., Finwave Semiconductor Inc. has joined MITRE Engenuity’s Semiconductor Alliance.
The goal is to help establish a U.S.-wide approach to protect intellectual property in GaN chipmaking.
Currently, GaN semiconductors are almost exclusively manufactured outside of the U.S. Finwave and the Semiconductor Alliance seek to change this by stimulating semiconductor manufacturing in the U.S. with new fabs, the expansion of existing fabs and boost research, development and production.
Finwave is a developer of 3D GaN devices and plans to work with the Semiconductor Alliance to address chip supply chain issues and make disruptive 3D GaN FinFET IC technology readily available.
Formed back in April, the Semiconductor Alliance is a whole-of-nation approach to focus on domestic U.S. semiconductor and supply chain issues. The goal is to increase global competition in the U.S. for chip making as well as ensure American innovation is not disrupted.
“Semiconductor innovation is the key to making critical advances in things like 5G, AI, the internet of things and other technologies that benefit society and are shaping the future,” said Bin Lu, CEO of Finwave. “In joining the Alliance’s growing membership, Finwave will have access to high-volume fabs and the lithography requirements necessary to bring our technology to volume production — and unlock the promise of 5G.”
Finwave’s 3D GaN FinFet technology improves linearity, output power and efficiency in 5G millimeter wave (mmWave) systems, which reduces the costs to carriers. The company said by using high volume 8 inch silicon CMOS fabs for the 3D GaN chips, the technology will benefit from both the cost model and scalability of silicon technology.