TSMC and ST collaborate to develop wide bandgap process technology

21 February 2020

Pure play founder Taiwan Semiconductor Manufacturing Corp. (TSMC) and semiconductor giant STMicroelectronics will work together to develop gallium nitride (GaN) process technology.

Through the agreement ST’s GaN products will be manufactured using TSMC’s GaN process technology to manufacturer discrete and integrated GaN devices to market.

GaN technology is a type of wide bandgap semiconductor material that is touted to have benefits over traditional silicon-based semiconductors in power applications. These benefits include greater energy efficiency, the ability to design more compact devices and switch at speeds as much as 10 times faster than silicon devices. This allows GaN devices to be suited for automotive, industrial, telecom and consumer applications.

For ST, power GaN and GaN chip technology will be used for automotive converters and chargers for hybrid and electric vehicles. ST said advanced process technology for GaN will help accelerate the trend of electrification of consumer and commercial vehicles — something automotive OEMs are moving toward.

ST expects the first samples of power GaN discrete devices to be delivered later this year followed by actual products rolled out in the following months.

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