New Yorker Electronics has announced its release of the new Vishay Siliconix 30 V N-channel TrenchFET Gen V power metal-oxide semiconductor field-effect transistor (MOSFET) that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 V, a 5% improvement over the previous generation product.
In addition, the device delivers on-resistance of 1.5 mΩ at 4.5 V, while its 29.8 mΩ*nC on-resistance times gate charge at 4.5 V — a critical figure of merit (FOM) for MOSFETs used in switching applications — is one of the lowest on the market. The Vishay SiSS52DN MOSFET’s FOM represents a 29% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications. It has a temperature range of -55° C to 150° C.
The single configuration SiSS52DN is ideal for low side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring field effect transistors, and load switches for power supplies in servers and telecom and radio frequency equipment. By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both. The new device is also 100% RG- and UIS-tested, RoHS-compliant and halogen-free.