Guerrilla RF Inc., a developer of high performance radio frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs), has introduced the company’s first two indium gallium phosphide heterojunction bipolar transistor power amplifier products. Both devices deliver 60% saturated efficiency, with high gain and high output power — making them ideal choices for the final stage of applicable transmit chains.
GRF5504 is a high-efficiency power amplifier that delivers up to 3.5 W at saturated output power (Psat), with 
Source: Guerrilla RFVcc set to 5.0 V and a low Iccq of 120 mA. Power-added efficiency (PAE) at Psat is roughly 64% and the device can be tuned over a range of frequencies from around 400 MHz to 500 MHz, with typical fractional bandwidths of 3% to 5%.
GRF5509 is another high-efficiency power amplifier that delivers 4 W OP1dB, with Psat approaching 5 W with Vcc at 5.0 V and a low Iccq of 125 mA. PAE at Psat is 58% and this part can be tuned over a range of frequencies from around 700 MHz to 1000 MHz, with typical fractional bandwidths of 3% to 5%.
Both devices are supplied in the QFN-16 package (3 mm x 3 mm), with identical pinouts and flexible biasing for both voltage and current. Additionally, high linearity tunes for each part deliver OIP3 numbers greater than 45 dBm. These notes for optimal IP3/IMD/ACLR performance in linear applications can be found on the company’s website, under the landing page of the individual part number.
According to Research and Markets, the overall wireless network infrastructure market will witness tremendous growth over the coming years. At a compound annual growth rate of over 5%, the market will account for over $104 billion in annual spending by the end of 2020.
Pricing and availability
Samples and evaluation boards are available now for both devices, with production available in late Q3/early Q4 2019. Pricing for 10,000 pieces is $2.25 for both parts.
