GaN SSPAs Offer High Power and Gain across Frequencies Up to 7.5 GHz

12 July 2016

Fairview Microwave Inc. has released a line of solid state GaN (Gallium Nitride) amplifiers. These GaN power amplifiers offer designers a unique solution of off-the-shelf components, typically requiring months of lead time to acquire.

Solid state GaN (Gallium Nitride) amplifiers. Source: Pasternack  Solid state GaN (Gallium Nitride) amplifiers. Source: Pasternack

The rugged connectorized amplifier designs have the advantage of high output load impedance that offers easier impedance matching over wider bandwidths using lower loss components. The high thermal conductivity of Gallium Nitride helps to dissipate heat more effectively, resulting in amplifier designs that have significantly higher output power levels over broadband and narrowband frequencies. Common applications include commercial and military radar, jamming systems, medical imaging, communications and electronic warfare.                        

Fairview’s newest GaN RF amplifiers include models that feature very high gain levels from 43 to 60 dB across mostly broad frequency bands ranging from 30 MHz to 7.5 GHz. Saturated output power levels range from 10 watts to 100 watts with up to 35% Power Added Efficiency (PAE).

All of the high power GaN amplifiers have single voltage supplies which are internally regulated. The 50 ohm input/output matched designs are adaptable to a range of power and modulation requirements. The power amplifiers produce a harmonic response of -15 to -20 dBc under worst case conditions.

The GaN amplifiers are designed to withstand environmental conditions such as humidity, altitude, shock and vibration. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.

The amplifiers are in stock and ready to ship today.

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