GaN Systems will introduce new gallium nitride (GaN) power transistors focused on the industrial, automotive and renewable energy markets at the upcoming 2018 Applied Power Electronics Conference and Expo (APEC).
The company plans to highlight several integrated half-bridge ICs with driver solutions for consumer and data center applications as well as new design tools such as evaluation boards for the Insulated Metal Substrate (IMS) evaluation platform — a flexible, low-cost, high-power development platform for high-efficiency power systems with applications requiring 3 kilowatts or higher.
Furthermore, GaN Systems will showcase its GaN power transistor power levels and form factors in terms of how to solve the power challenges of consumer electronics, data centers, automotive, renewable energy and industrial applications. GaN will have numerous speakers presenting about how previously unattainable system performance is now a reality in many power-reliant industries.
The 2018 APEC conference takes place March 4-8 in San Antonio, Texas.
