GaN Systems, a developer of GaN power semiconductors, has unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90 A part and 2.4X-to-4.6X the current rating of other high current GaN in the industry. The GS-010-120-1-T is an enhancement mode GaN-on-silicon power transistor that leverages all of the die design and packaging advantages delivered from GaN Systems. This new GaN transistor will be on display at the Applied Power Electronics Conference & Exposition (APEC) in San Antonio, Tex., on March 4-8, 2018, in Booth #1041.
This revolutionary transistor is ideal for the growing 48 V applications in the automotive, industrial and renewable energy industries that require power systems with high power levels in smaller size form factors. Bringing products like the GS-010-120-1-T into market results in realizations such as longer range electrical vehicles, lower operating cost renewable energy equipment and smaller, highly integrated industrial power equipment.
In addition, the transistor enables greater design flexibility and affords options for immediate specification changes. The transistor is footprint-compatible with GaN Systems’ 100 V, 90 A GaN E-HEMT (GS61008T), thereby enabling customers to add further power by substituting the GS-010-120-1-T without changing their board. Increasing the current capability in the same size package allows customers to effectively increase the power by 33 percent for the same system volume.
For more information, please contact GaN Systems Sales or come see GaN Systems at Booth #1041 at APEC.