Product Watch

Discover the BSS138PW,115 N-channel MOSFET by Nexperia USA Inc., featuring a 60V drain-source breakdown voltage and 320mA continuous drain current. Ideal for various electronic applications.

The BSS138NH6327XTSA2 is an N-channel MOSFET from Infineon Technologies, designed for high power applications with a 60V drain-source breakdown voltage and 230mA continuous drain current.

The 1N4148WSF-7 is a high-speed switching diode from Diodes Incorporated, featuring a fast reverse recovery time and low forward voltage drop.

The MMBT3904-7-F from Diodes Incorporated is a high-gain NPN transistor, ideal for various electronic applications.

The ON Semiconductor 2N7002ET1G is a high-performance N-Channel MOSFET, ideal for power management and switching applications.

The ON Semiconductor MMBT3904LT3G is a high-quality NPN bipolar transistor, ideal for general-purpose amplifier and switching applications.

Also known as ultracapacitors, double-layer capacitors, or electro-chemical double layer (EDLC).

The ECS-MPIL0630 is a family of ECS Inc. low profile power inductors that are offered in 7.1 x 6.6 x 3.0 mm 2-pad package. This electronic component has low loss due to low DC resistance. The ECS-MPIL0630 series has an inductance range from 0.47 µH to 22 µH ±20% with a current range from 2.5 A to 18.0 A over the operating temperature of -40°C ~ +125°C.