Power Semiconductors

MOSFETs with Super Junction Transistors and Fast Recovery Diode

15 May 2017

The MDmesh DK5 power MOSFETs. Image credit: STMicroelectronicsThe MDmesh DK5 power MOSFETs. Image credit: STMicroelectronics

STMicroelectronics has introduced MDmesh DK5 power MOSFETs that are very high voltage (VHV) super-junction transistors with fast-recovery diode.

The MOSFETs are for use by designers to improve efficiency of power-conversion topologies, including LLC resonant converters with zero-voltage switching (ZVS). The components have voltage ratings from 950V to 1050V with lower-on resistance and higher current rating per die area compared to planar MOSFETs, ST says.

The components increase the power density by using fewer parallel components in converters for high-power equipment such as telecom and data servers powered from high bus voltages, industrial welders, plasma generators, high-frequency induction heater and X-ray machines.

The devices are in volume production with prices starting from $8.85 in 1,000 unit quantities.

To contact the author of this article, email PBrown@globalspec.com


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