Toshiba America Electronic Components, Inc. has expanded its portfolio of small, low on-resistance MOSFETs with the addition of two new N-channel, enhancement-mode MOSFETs—the SSM6K513NU and SSM6K514NU. The maker claims the N-channel MOSFETs offer new low on-resistance, and are tailored for load switching in mobile devices, such as smartphones and tablets, offering USB Type-C and USB power delivery connectors.
Housed in a six-pin surface-mount package, Toshiba’s 30 V N-channel MOSFET drives on-resistance to 6.5 mΩ. According to Toshiba, the 30 V SSM6K513NU and 40 V SSM6K514NU utilize the company’s leading-edge, low-voltage U-MOS IX-H series trench process to drive down on-resistance RDS(on) to a new low, as well as substantially reduce output charge QOSS. As a result, the SSM6K513NU achieves an on-resistance of only 6.5 mΩ at VGS = 10 V, and SSM6K514NU offers just 8.9 mΩ at VGS = 10 V. The result is higher efficiency across a wide range of load conditions. Furthermore it reduces heat dissipation resulting from turn-on loss by approximately 40% as compared to competing MOSFETS in the market, Toshiba said.
Both MOSFETs are available in six-pin surface-mount package SOT-1220, internally labeled UDFN6B.
While the 30 V SSM6K513NU is rated to deliver a drain current of 15 A, the 40 V SSM6K514NU is rated for 12 A. The MOSFETs are designed to dissipate power up to 1.25 W, and are AEC-Q101 (Rev. D) qualified for automotive use. In addition, they are compliant with RoHS requirements. The parts are in production and available from the distributors.
