Fairchild Semiconductor has expanded its growing portfolio of automotive-grade semiconductor solutions for hybrid electric vehicles (HEV), plug-in hybrid electric vehicles (PHEV) and electric vehicles (EV) with its new discrete and bare die IGBTs and diodes. These IGBTs and diodes are suited for traction inverters, a core component of all HEVs, PHEVs and EVs that convert the batteries’ electricity from direct current into the three-phase alternating current required by the vehicles’ drive motors.
The discrete and bare die IGBTs and diodes use advanced third generation Field Stop Trench IGBT technology and a soft fast recovery diode qualified to automotive-grade standards and have additional features and options. The combination of these technologies, features and options enables Fairchild to provide products with a very tight parametric distribution for both discrete and bare die solutions.
Fairchild’s FGY160T65SPD_F085 and FGY120T65SPD_F085 discrete IGBTs are well-suited to traction inverters and other HEV/PHEV/EV powertrain components that require high power density and high reliability.
Fairchild is also announcing availability of its PCGA200T65NF8, PCRKA20065F8, PCGA300T65DF8, and PCRKA30065F8 bare die IGBTs and diodes for automakers and automotive parts suppliers building their own power modules for high-performance traction inverters and other motor-driving components.
The bare die IGBTs are also available with integrated monolithic current sense and temperature sense to provide additional levels of protection.
The bare die IGBTs can be customized to meet special requirements. Options include changing the gate pad size and location to accommodate different diameters of aluminum wire, resizing the die, and customizing the breakdown voltage and other electrical parameters. A solderable top metal version is also available and is designed for advanced wire bondless assembly technologies, like soldering technologies as sintering.