Renesas Electronics Corporation has introduced two new series of Advanced Low Power SRAM (Advanced LP SRAM), designed to provide enhanced reliability and longer backup battery life for applications such as factory automation (FA), industrial equipment and the smart grid. Using an innovative memory cell technology that improves reliability and enables longer battery operation, the SRAMs were fabricated using a 110-nanometer (nm) process.
The RMLV1616A Series of 16-megabit (Mb) devices and the RMWV3216A Series of 32-Mb devices were created to address the prevention of soft errors caused by alpha rays and cosmic neutron rays. Until now, ways of dealing with the challenge include embedding an error correcting code (ECC) circuit in the SRAM to correct soft errors that occur. The error correction capabilities of ECC circuits are often limited and some cannot correct simultaneous errors affecting multiple bits.
The Renesas devices feature soft error resistance over 500 times that of conventional Full CMOS memory cells. This makes it desirable for use in fields requiring high reliability, including FA, measurement devices, smart grid-related devices and industrial equipment, in addition to other fields, such as consumer devices, office equipment and communication devices.
Features include:
- Renesas’ exclusive Advanced LP SRAM technology for dramatically better soft error resistance and enhanced reliability
- Reduction of standby current to less than half the earlier level for longer backup battery service life
- Three Package Options
Samples of both series will be available in September 2015. Pricing depends on the capacity. For example, the 16 Mb RMLV1616A Series is priced at $16.50 per unit, and the 32 Mb RMWV3216A Series at $31 per unit. Mass production is scheduled to begin in October 2015. However, mass production using the 110-nm process has already begun for Advanced LP SRAM products with 4 Mbit and 8 Mbit capacities.
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