Renesas Electronics Corp. has launched a series of wide bandgap gallium nitride (GaN) semiconductors to support dense DC/DC power conversion in AI data centers.
The power semiconductors support power conversion and distribution for the 800 volt direct current power architecture rolled out by Nvidia, which is designed to power a faster and smarter AI infrastructure.
The GaN chips have an operating voltage of 48 V to as high as 400 V with an option to stack up to 800 V. The converters achieve up to 98% efficiency and using bi-directional GaN switches allows Renesas to simplify rectifier designs and increase power density, the company said.
The power semiconductors come as GPU-driven AI workloads and power consumption in data center is becoming a critical concern, Renesas said. GaN power chips are emerging as a solution due to their:
- Fast switching
- Lower energy losses
- Thermal management
GaN power devices will also enable the development of 800 V DC buses within racks to significantly reduce distribution losses and the need for large bus bars, the company said.
“AI is transforming industries at an unprecedented pace, and the power infrastructure must evolve just as quickly to meet the explosive power demands,” said Zaher Baidas, senior VP and GM for power at Renesas. “Renesas is helping power the future of AI with high-density energy solutions built for scale, supported by our full portfolio of GaN FETs, MOSFETs, controllers and drivers. These innovations will deliver performance and efficiency, with the scalability required for future growth.”
