A collaboration of European technology vendors — SweGaN, Ericsson, SaaB and Chalmers University of Technology — will seek to develop gallium nitride (GaN) power amplifier technology for next-generation 6G networks.
The project’s goals will target the 7GHz to 15 GHz frequency range, which is said to be critical for 6G applications.
The project will combine telecoms, defense vendors and academia to unlock power amplifiers for 6G networks. SweGaN, a GaN-on-SiC epitxial wafer maker, will use its QuanFINE solutions in the collaboration to deepen the understand of the material properties and the HEMT device characteristics.
The project will have two approaches: An academic track and an industrial track.
The academic track will focus on the influence and process variations on HEMT device-level performance by advanced modeling. The goal of this track will be to extract models and define design boundaries for PA efficiency.
The industrial track will focus on PA design, fabrication and benchmarking using foundry processes. The collaboration here will focus on devices for modeling and validation for real-world system needs.
“This collaboration strengthens the bridge between civilian and defense technologies,” said Johan Carlert, head of microwave and antenna design at Saab. “By working closely with leading partners across the value chain, we accelerate the development of RF technologies that will have real-world impact in both defense and civilian domains.”
