Looking to expand its commitment to large-scale manufacturing of power gallium nitride (GaN) semiconductors, pure-play foundry GlobalFoundries has acquired Tagore Technology’s GaN intellectual property (IP) products.
GaN is a type of wide bandgap material that is used in a range of applications to increase efficiency and power gains that traditional silicon is not capable of achieving.
Wide bandgap materials like GaN and SiC are key semiconductor types that are used to provide more efficient power for these applications that are expected to grow rapidly over the next decade. These devices are in high demand due to their inclusion in hot sectors like electric vehicles (EVs), renewable energy, consumer electronics and AI. While EVs are slowing in sales, they are not expected to go away.
The GaN IP will help to improve power efficiency, reducing costs and managing heat generation in these sectors.
GlobalFoundries was awarded $1.5 billion in direct funding through the CHIPS and Science Act that the company will use to enable high-volume manufacturing of technologies like GaN as well as expand its Malta, New York, fab, supporting the construction of a new state-of-the-art fab at the Malta campus.
“We are committed to being the foundation of our customers’ power applications today and for decades to come,” said Niels Anderskouv, chief business officer at GlobalFoundries. “With this acquisition, GF takes another step toward accelerating the availability of GaN and empowering our customers to build the next generation of power management solutions that will reshape the future of mobility, connectivity and intelligence.”
